8/31/2023 0 Comments Pn2222In your particular example, however, there is an IR diode as well. So if we had a 5V supply and a 100 ohm resistor across it, the current I would be V/R = 5V/100ohm = 0.05A = 50mA. Ohm's law expresses the relationship among resistance (R), current (I) and voltage (V): V = I * R. When each time the collector current value increases, the breakdown must happen at a point, and voltage increases towards a larger value.There's not quite enough information in your question to give a definitive answer, but let's go through the design steps so that not only can you figure out this one, but you might be better equipped to solve the next transistor question that occurs to you. The figure shows the collector saturation region characteristics of the PN2222 transistor, the graph is plotted with the collector to emitter voltage vs base current. collector saturation region characteristics of the PN2222 transistor The figure shows the DC current gain characteristics of the PN2222 transistor, the graph is been plotted with current gain vs collector current.Īs we can see from the graph, the current gain will touch the peak value and drop, the collector current value will increase towards a larger limit. PN2222 transistor characteristics DC current gain characteristics of the PN2222 transistor The transition frequency value is higher at PN2222 and lower at the MPS650 transistor. The current gain value of PN2222 and 2N4401 is almost the same, but the MPS650 had a lower value. In the electrical specification comparison of PN2222 vs 2N4401 vs MPS650, the voltage and current specs of each of the transistors are the same. In the table, we listed the PN2222 vs 2N4401 vs MPS650, the comparison of each transistor electrical specification. The electrical specifications of each transistor are the same, these devices have been used for almost the same applications. If you need the datasheet in pdf please click this link PN2222 transistor equivalent The junction temperature of -55 to 150℃, this is the most common temperature value for a higher power transistor device. The transition frequency is 300MHz, this is the switching frequency of this device. The current gain of the PN2222 transistor is 35 to 300hFE, the gain value is important at amplifier and voltage regulator devices. The power dissipation of the PN2222 transistor is 625mW, the power dissipation of the PN2222 transistor. The collector current is 600mA, it is the maximum load capacity of the PN2222 transistor. The collector to emitter saturation voltage is 1v, it is the voltage used to turn ON the collector to emitter junction. The voltage terminal specs such as collector to the base are 60V, collector to emitter is 30v, and emitter to base voltage is 5v, the transistor terminal voltage specs show that PN2222 is a general-purpose transistor type. In this section, we explain the specification description and application explanation of the PN2222 transistor. PN2222 transistor specification and application description The TO-92 package is made with a mixture of epoxy and plastic, it is the most compact transistor package, so the circuit made with these transistors is small and compact. The PN2222 component had the transistor package TO-92, the TO-92 is a general-purpose package. The collector is the output of the transistor The base is used to trigger the transistor The emitter is the input of the transistor.
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